China unveils world’s fastest flash memory device with the name of “PoX.”
A Chinese team of researchers has created a groundbreaking flash memory device capable of storing data at an unprecedented speed; one bit every 400 picoseconds. This achievement sets a new benchmark for the fastest semiconductor storage device known to date.
Called “PoX,” this non-volatile memory device surpasses even the quickest volatile memory technologies, such as those that require between 1 and 10 nanoseconds to store a single bit. To put it in perspective, one picosecond is a trillionth of a second, or one-thousandth of a nanosecond.
Volatile memory types like SRAM and DRAM are unsuitable for energy-efficient systems due to data loss when power is cut. On the other hand, while flash memory conserves power, it typically lacks the speed necessary to keep up with the performance needs of artificial intelligence systems.
The Fudan University team broke through these limitations by developing a two-dimensional Dirac graphene-channel flash memory. This innovation enables ultrafast storage and retrieval of information, effectively redefining the speed capabilities of non-volatile memory.
These findings were shared on Wednesday in the prestigious journal Nature.
Lead researcher Zhou Peng of Fudan University noted that the use of AI algorithms to fine-tune testing conditions was key in driving this breakthrough and holds promise for future practical implementations.
A peer reviewer from Nature highlighted the originality of the research, stating that it offers enough innovation to potentially inspire the next generation of high-speed flash memory designs.
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